Light emitting structure and a manufacturing method thereof

ABSTRACT

A light-emitting structure includes a semiconductor light-emitting element, a first connection point and a reflective element. The semiconductor light-emitting element includes a bottom surface, a top surface opposite to the bottom surface, and a side surface arranged between the bottom surface and the top surface. The first connection point is arranged on the bottom surface. The reflective element includes a first portion arranged right beneath the bottom surface, and a second portion not overlapping the bottom surface and uplifted from a lower elevation lower than the bottom surface to a higher elevation substantially equal to that of the top surface along a curved path.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of Ser. No. 15/285,678,filed on Oct. 5, 2016, which is a continuation application of Ser. No.14/536,169, filed on Nov. 7, 2014, now U.S. Pat. No. 9,484,498, which isa continuation application of Ser. No. 13/227,841, filed on Sep. 8,2011, now U.S. Pat. No. 8,936,970 and claims the right of priority basedon Taiwan patent application Ser. No. 099130428, filed on Sep. 8, 2010,and the content of which is hereby incorporated by reference in itsentirety.

TECHNICAL FIELD

The present application relates to a light-emitting structure and amethod of making the same. The light-emitting structure includes asemiconductor light-emitting element and electrodes. To improve a lightextraction efficiency of the light-emitting element, the electrodes canform a concave which reflects the light emitted by the semiconductorlight-emitting element.

DESCRIPTION OF BACKGROUND ART

In a commonly-known process of making a light-emitting structure, a chipof a light-emitting element such as a light-emitting diode (LED) is madeby dicing a finished epitaxial structure formed by an epitaxial growthprocess. The chip is then arranged on a submount, which is a lead frameor a big size mounting substrate, for the following wire-bonding,soldering, phosphor-coating, and encapsulation processes. However, thereare too many steps in these processes. Consequently, the time and thecost of the manufacture are dramatically increased.

SUMMARY OF THE DISCLOSURE

The application discloses a light-emitting structure which includes asemiconductor light-emitting element, a first connection point and areflective element.

The semiconductor light-emitting element includes a bottom surface, atop surface opposite to the bottom surface, and a side surface arrangedbetween the bottom surface and the top surface. The first connectionpoint is arranged on the bottom surface. The reflective element includesa first portion arranged right beneath the bottom surface, and a secondportion not overlapping the bottom surface and uplifted from a lowerelevation lower than the bottom surface to a higher elevationsubstantially equal to that of the top surface along a curved path.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A˜1H illustrate a manufacturing process in accordance with thefirst embodiment of the present application;

FIGS. 2A and 2B illustrate a structure of an LED in accordance with thesecond embodiment of the present application;

FIGS. 3A and 3B illustrate a structure of an LED in accordance with thethird embodiment of the present application;

FIGS. 4A˜4H illustrate a manufacturing process in accordance with theforth embodiment of the present application;

FIGS. 5A˜5H illustrate a manufacturing process in accordance with thefifth embodiment of the present application;

FIGS. 6A˜6H illustrate a manufacturing process in accordance with thesixth embodiment of the present application;

FIG. 7 illustrates a structure in accordance with the seventh embodimentof the present application.

DESCRIPTIONS OF EMBODIMENTS

The application discloses a light-emitting structure and a method ofmaking the light-emitting structure.

Embodiment 1

FIGS. 1A—1H are schematic diagrams showing the structures in accordancewith one embodiment of the present application. As shown in FIG. 1A, acarrier 10, on which several semiconductor light-emitting element 20 arearranged, is provided. There is a gap 204 between the semiconductorlight-emitting elements 20. The semiconductor light-emitting elements 20can emit lights having identical or different wavelength(s) rangedbetween ultraviolet and infrared. The semiconductor light-emittingelement 20 can be a light-emitting diode having an upper surface 200, onwhich a first connection point 201 is arranged, and a down surface 220on which a second connection point 202 is arranged, wherein the uppersurface and the down surface are on the same side 222 of thelight-emitting element 20. The semiconductor light-emitting element 20can emit light when the current is injected through the first and thesecond connection points. The carrier 10 can be a growth substrate, suchas sapphire, SiC, ZnO, GaN, AlN, or GaAs, for growing the semiconductorlight-emitting element 20. The semiconductor light-emitting elements 20can be formed on the carrier 10 by a conventional semiconductor growthtechnology.

Then, as shown in FIG. 1B, a glue layer 30 is formed on the gap 204wherein the glue layer 30 is mainly formed on the side wall 106 of thesemiconductor light-emitting element 20 to form a surface 301. The gluelayer 30 can be formed by spin coating, printing, or molding gluefilling, and the material of the glue layer 30 can be elastic materialsuch as silicone rubber, silicon resin, silicone gel, elastic PU, porousPU, or acrylic rubber; or dies-cutting glue such as blue film and UVglue. During the process of forming the glue layer 30, some glue layer30 may cover the first connection point 201 and the second connectionpoint 202 of the semiconductor light-emitting element 20. In that case,the first connection point 201 and the second connection point 202 ofthe semiconductor light-emitting elements 20 can be exposed by polishingprocess to remove the glue layer 30 as shown in FIG. 1C.

Next, as shown in FIG. 1D, a metal layer 40 is formed on the glue layer30 and the semiconductor light-emitting elements 20. The metal layer 40can be formed by plating, evaporation, or sputtering, and can be thematerial with conductivity and high reflectivity, such as copper (Cu),aluminum (Al), gold (Au), silver (Ag) or other alloys. Since theformation of the metal layer 40 follows the topography of the belowstructure, the metal layer 40 contacting with the glue layer 30 forms acorresponding surface 401 along the surface 301 of the glue layer 30,and contacts with the first connection point 201 and the secondconnection point 202 of the semiconductor light-emitting element 20,wherein the corresponding surface 401 can be a curved surface, a beveledsurface, or the combination of a partial curved surface and a partialbeveled surface.

Then, as shown in FIG. 1E, the metal layer 40 can be patterned to form aplurality of grooves 402 by photolithography and etching, wherein thegrooves 402 on the semiconductor light-emitting element 20 can dividethe metal layer 40 on the semiconductor light-emitting element 20 into afirst electrode 400 a and a second electrode 400 b. The first electrode400 a is electrically connected to the first connection point 201, andthe second electrode 400 b is electrically connected to the secondconnection point 202. The groove 402 upon the gap 204 can electricallyisolate the two adjacent semiconductor light-emitting elements 20.

In another embodiment, after the polishing process as shown in FIG. 1C,the first electrode 400 a and the second electrode 400 b can also beformed by the process of forming a patterned photoresist to cover thegap 204 and the second surface 203 between the first connection point201 and the second connection point 202, and then electroplating metalmaterial on the surface 301, the first connection point 201 and thesecond connection point 202, and then removing the patternedphotoresist.

Then, as shown in FIG. 1F, the carrier 10 can be removed by laserlift-off, etching, or other methods. Finally, the glue layer 30 isremoved as shown in FIG. 1G to exposes the corresponding surface 401 ofthe first electrode 400 a and the second electrode 400 b. A plurality oflight-emitting structures 50 is formed accordingly. It should be notedthat since the first electrode 400 a and the second electrode 400 b ofthe light-emitting structure 50 are conductive, the external current isinjected into the semiconductor light-emitting element 20 through thefirst connection point 201 and the second connection point 202 togenerate light. Therefore, there is no need to connect wires to thefirst connection point 201 and the second connection point 202 of thesemiconductor light-emitting element 20 by photolithography wire or wirebonding. Since the corresponding surface 401 of the first electrode 400a and the second electrode 400 b forms a concave 405, which is a metalsurface for reflection, as the semiconductor light-emitting element 20located on the concave 405 emits a light 15 (the dashed line) from alight-emitting side 206 of the semiconductor light-emitting element 20,the corresponding surface 401 can reflect the light 15 to improveoverall light extraction efficiency. And, as shown in FIG. 1H, thegroove 402 among the semiconductor light-emitting element 20, the firstelectrode 400 a, and the second electrode 400 b can be filled in withinsulating material 32 such as epoxy to enhance the ability of thestructure of semiconductor light-emitting element 20 to resist thermalfatigue and protect the first connection point 201 and the secondconnection point 202.

Embodiment 2

Next, as shown in FIG. 2A, the semiconductor light-emitting element 20further can be covered by a wavelength conversion layer 60, wherein thewavelength conversion layer 60 can be formed by spin coating,deposition, dispensing, scraper, or molding glue filling. The wavelengthconversion layer 60 includes at least one material which is bluephosphor, yellow phosphor, green phosphor, red phosphor, ZnSe, ZnCdSe,III-phosphide, III-arsenide, or the combination of III-nitride. The bluephosphor can convert the light to blue light, and the others like yellowphosphor, green phosphor, and red phosphor have the similar function.The material and the combination of any kinds of phosphor areconventional art and are not explained here. The wavelength conversionlayer 60 converts all or partial of the light with a first wavelengthemitted from the semiconductor light-emitting element 20 to a light witha second wavelength. After forming the wavelength conversion layer 60,an encapsulation layer 70 can also be formed on the light-emittingstructure 50 by dispensing. The encapsulation layer 70 can be designedas a structure having a function of lens to improve light extractionefficiency. And, as shown in FIG. 2B, the groove 402 among thesemiconductor light-emitting element 20, the first electrode 400 a, andthe second electrode 400 b can be filled in with insulating material 32such as epoxy to enhance the ability of the structure of semiconductorlight-emitting element 20 to resist thermal fatigue and protect thefirst connection point 201 and the second connection point 202.

Embodiment 3

FIG. 3A shows another embodiment of the present application indicatingthe encapsulated light-emitting structure 50 disclosed in FIG. 2A islocated upon a sub-carrier 80. The sub-carrier 80 can be a printedcircuit board or a carrier with via plug. A control signal istransmitted into the light-emitting structure 50 via the sub-carrier 80with the designed circuit. The light-emitting structure 50 can be weldedon the sub-carrier 80 by the high-frequency welding process and so on.And, as shown in FIG. 3B, the groove 402 among the semiconductorlight-emitting element 20, the first electrode 400 a, and the secondelectrode 400 b can be filled in with an insulating material 32 such asepoxy to enhance the ability of the structure of semiconductorlight-emitting element 20 to resist thermal fatigue and protect thefirst connection point 201 and the second connection point 202.

Embodiment 4

FIGS. 4A-4H are schematic diagrams in accordance with another embodimentof the present application. As shown in FIG. 4A, a carrier 10 isprovided, and a connecting layer 12 is formed on the carrier 10 by spincoating, evaporation, or printing, wherein the upper and lower surfacesof the connecting layer 12 have adhesion to fix a plurality ofsemiconductor light-emitting elements 20 on the carrier 10. There is aplurality of gaps 204 between the semiconductor light-emitting elements20. The plurality of the semiconductor light-emitting elements 20 canemit lights having the same or different wavelengths ranged fromultraviolet to infrared ray. The semiconductor light-emitting element 20can be a light-emitting diode having a first connection point 201 and asecond connection point 202 for the current injection for emittinglight. The carrier 10 can be a temporary substrate, and the pluralsemiconductor light-emitting elements 20 can be produced elsewhere andthen be transferred to the carrier 10. The material of the carrier 10can be silicone rubber, glass, quartz, ceramic, or alloys.

Then, as shown in FIG. 4B, a glue layer 30 is formed on the gap 204wherein the glue layer 30 is mainly formed on the side wall 106 of thesemiconductor light-emitting element 20 to form a surface 301. The gluelayer 30 can be formed by spin coating, printing, or molding gluefilling, and the material of the glue layer 30 can be elastic materialsuch as silicone rubber, silicon resin, silicone gel, elastic PU, porousPU, acrylic rubber; or dies-cutting glue such as blue film and UV glue.During the process of forming the glue layer 30, part of the glue layer30 may cover the first connection point 201 and the second connectionpoint 202 of the semiconductor light-emitting element 20. In that case,the first connection point 201 and the second connection point 202 ofthe semiconductor light-emitting elements 20 can be exposed by polishingprocess to remove the glue layer 30 as shown in FIG. 4C.

Next, as shown in FIG. 4D, a metal layer 40 is formed on the glue layer30 and the semiconductor light-emitting elements 20. The metal layer 40can be formed by plating, evaporation, or sputtering, and can be thematerial with conductivity and high reflectivity, such as copper (Cu),aluminum (Al), gold (Au), silver (Ag) or other alloys. Since theformation of the metal layer 40 follows the topography of the belowstructure, the metal layer 40 contacting with the glue layer 30 forms acorresponding surface 401 along the surface 301 of the glue layer 30,and contacts with the first connection point 201 and the secondconnection point 202 of the semiconductor light-emitting element 20,wherein the corresponding surface 401 can be a curved surface, a beveledsurface, or the combination of a partial curved surface and a partialbeveled surface.

Then, as shown in FIG. 4E, the metal layer 40 can be patterned to form aplurality of grooves 402 by photolithography and etching, wherein thegrooves 402 on the semiconductor light-emitting element 20 can dividethe metal layer 40 on the semiconductor light-emitting elements 20 intoa first electrode 400 a and a second electrode 400 b. The firstelectrode 400 a is electrically connected to the first connection point201, and the second electrode 400 b is electrically connected to thesecond connection point 202. The groove 402 upon the gap 204 canelectrically isolate the two adjacent semiconductor light-emittingelements 20.

In another embodiment, after the polishing process as shown in FIG. 4C,the first electrode 400 a and the second electrode 400 b can also beformed by the process of forming a patterned photoresist to cover thegap 204 and the second surface 203 between the first connection point201 and the second connection point 202, and then electroplating metalmaterial on the surface 301, the first connection point 201 and thesecond connection point 202, and then removing the patternedphotoresist.

Then, as shown in FIG. 4F, the carrier 10 and the connecting layer 12can be removed by laser lift-off, etching, or other methods. Finally,the glue layer 30 is removed as shown in FIG. 4G to exposes thecorresponding surface 401 of the first electrode 400 a and the secondelectrode 400 b. A plurality of light-emitting structures 50 is formedaccordingly. It should be noted that since the first electrode 400 a andthe second electrode 400 b of the light-emitting structure 50 areconductive, the external current is injected into the semiconductorlight-emitting element 20 through the first connection point 201 and thesecond connection point 202 to generate light. Therefore, there is noneed to connect wires to the first connection point 201 and the secondconnection point 202 of the semiconductor light-emitting element 20 byphotolithography wire and wire bonding. Since the corresponding surface401 of the first electrode 400 a and the second electrode 400 b forms aconcave 405, which is a metal surface for reflection, as thesemiconductor light-emitting element 20 located on the concave 405 emitsa light 15 (the dashed line) from a light-emitting side 206 of thesemiconductor light-emitting element 20, the corresponding surface 401can reflect the light 15 to improve overall light extraction efficiency.And, as shown in FIG. 4H, the groove 402 among the semiconductorlight-emitting element 20, the first electrode 400 a, and the secondelectrode 400 b can be filled in with an insulating material 32 such asepoxy to enhance the ability of the structure of semiconductorlight-emitting element 20 to resist thermal fatigue and protect thefirst connection point 201 and the second connection point 202.

Embodiment 5

FIGS. 5A˜5H are schematic diagrams showing the structures in accordancewith another embodiment of the present application. As shown in FIG. 5A,a carrier 10, on which several semiconductor light-emitting elements 20are arranged, is provided. There is a gap 204 between the semiconductorlight-emitting elements 20. The semiconductor light-emitting elements 20can emit lights having the same or different wavelength(s) rangedbetween ultraviolet and infrared. The semiconductor light-emittingelement 20 can be a light-emitting diode having an upper surface 200, onwhich a first connection point 201 is arranged, a down surface 220, onwhich a second connection point 202 is arranged, and a base 208. Theupper surface and the down surface are on the same side 222 of thesemiconductor light-emitting element 20. The material of the base can betransparent material such as Sapphire, Diamond, Glass, Epoxy, Quartz,Acryl, ZnO, or AN. The semiconductor light-emitting element 20 can emitlight when the current is injected through the first and the secondconnection points. The carrier 10 can be a growth substrate, such assapphire, SiC, ZnO, GaN, AlN, or GaAs, for growing the semiconductorlight-emitting element 20. The semiconductor light-emitting elements 20can be formed on the carrier 10 by a conventional semiconductor growthtechnology.

Then, as shown in FIG. 5B, a glue layer 30 is formed on the gap 204wherein the glue layer 30 is mainly formed on the side wall 106 of thesemiconductor light-emitting element 20 to form a surface 301. The gluelayer 30 can be formed by spin coating, printing, or molding gluefilling and the material of the glue layer 30 can be elastic materialsuch as silicone rubber, silicon resin, silicone gel, elastic PU, porousPU, or acrylic rubber; or dies-cutting glue such as blue film and UVglue. During the process of forming the glue layer 30, some glue layer30 may cover the first connection point 201 and the second connectionpoint 202 of the semiconductor light-emitting element 20. In that case,the first connection point 201 and the second connection point 202 ofthe semiconductor light-emitting elements 20 can be exposed by polishingprocess to remove the glue layer 30 as shown in FIG. 5C.

Next, as shown in FIG. 5D, a metal layer 40 is formed on the glue layer30 and the semiconductor light-emitting elements 20. The metal layer 40can be formed by plating, evaporation, or sputtering, and can be thematerial with conductivity and high reflectivity, such as copper (Cu),aluminum (Al), gold (Au), silver (Ag) or other alloys. Since theformation of the metal layer 40 follows the topography of the belowstructure , the metal layer 40 contacting with the glue layer 30 forms acorresponding surface 401 along the surface 301 of the glue layer 30,and contacts with the first connection point 201 and the secondconnection point 202 of the semiconductor light-emitting element 20,wherein the corresponding surface 401 can be a curved surface, a beveledsurface, or the combination of a partial curved surface and a partialbeveled surface.

Then, as shown in FIG. 5E, the metal layer 40 can be patterned to form aplurality of grooves 402 by photolithography and etching, wherein thegrooves 402 on the semiconductor light-emitting element 20 can dividethe metal layer 40 on the semiconductor light-emitting elements 20 intothe first electrodes 400 a and the second electrodes 400 b. The firstelectrode 400 a is electrically connected to the first connection point201, and the second electrode 400 b is electrically connected to thesecond connection point 202. The groove 402 upon the gap 204 canelectrically isolate the two adjacent semiconductor light-emittingelements 20.

In another embodiment, after the polishing process as shown in FIG. 5C,the first electrode 400 a and the second electrode 400 b can also beformed by the process of forming a patterned photoresist to cover thegap 204 and the second surface 203 between the first connection point201 and the second connection point 202, and then electroplating metalmaterial on the surface 301, the first connection point 201 and thesecond connection point 202, and then removing the patternedphotoresist.

Then, as shown in FIG. 5F, the carrier 10 can be removed by laserlift-off, etching, or other methods. Finally, the glue layer 30 isremoved as shown in FIG. 5G to exposes the corresponding surfaces 401 ofthe first electrode 400 a and the second electrode 400 b. A plurality oflight-emitting structures 50 is formed accordingly. It should be notedthat since the first electrode 400 a and the second electrode 400 b ofthe light-emitting structure 50 are conductive, the external current isinjected into the semiconductor light-emitting element 20 through thefirst connection point 201 and the second connection point 202 togenerate light. Therefore, there is no need to connect wires to thefirst connection point 201 and the second connection point 202 of thesemiconductor light-emitting element 20 by photolithography wire or wirebonding. Since the corresponding surface 401 of the first electrode 400a and the second electrode 400 b forms a concave 405 which is a metalsurface for reflection, as the semiconductor light-emitting element 20located on the concave 405 emits a light 15 (the dashed line) from alight-emitting side 206 of the semiconductor light-emitting element 20,the corresponding surface 401 can reflect the light 15 to improveoverall light extraction efficiency. And, as shown in FIG. 5H, thegroove 402 among the semiconductor light-emitting element 20, the firstelectrode 400 a, and the second electrode 400 b can be filled in with aninsulating material 32 such as epoxy to enhance the ability of thestructure of semiconductor light-emitting element 20 to resist thermalfatigue and protect the first connection point 201 and the secondconnection point 202.

Embodiment 6

FIGS. 6A˜6H are schematic diagrams showing the structures in accordancewith the sixth embodiment of the present application. As shown in FIG.6A, a carrier 10 which has a plurality of convex portions 102 and aplurality of channel portions 104 is provided. Several semiconductorlight emitting elements 20 are arranged on the convex portions 102correspondingly. The semiconductor light-emitting elements 20 can emitlights having the same or different wavelength(s) ranged betweenultraviolet and infrared. The semiconductor light-emitting element 20can be a light-emitting diode having an upper surface 200, on which afirst connection point 201 is arranged, and a down surface 220, on whicha second connection point 202 is arranged, wherein the upper surface andthe down surface are on the same side 222 of the light-emitting element20. The semiconductor light-emitting element 20 can emit light when thecurrent is injected through the first and the second connection points.The carrier 10 can be a growth substrate, such as sapphire, SiC, ZnO,GaN, AlN, or GaAs, for growing the semiconductor light-emitting element20. The semiconductor light-emitting elements 20 can be formed on thecarrier 10 by a conventional semiconductor growth technology.

Then, as shown in FIG. 6B, a glue layer 30 is formed on the channelportions 104 wherein the glue layer 30 is mainly formed on the side wall106 of the semiconductor light-emitting element 20 to form a surface301. The glue layer 30 can be formed by spin coating, printing, ormolding glue filling and the material of the glue layer 30 can beelastic material such as silicone rubber, silicon resin, silicone gel,elastic PU, porous PU, or acrylic rubber; or dies-cutting glue such asblue film and UV glue. During the process of forming the glue layer 30,some glue layer 30 may cover the first connection point 201 and thesecond connection point 202 of the semiconductor light-emitting element20. In that case, the first connection point 201 and the secondconnection point 202 of the semiconductor light-emitting elements 20 canbe exposed by polishing process to remove the glue layer 30 as shown inFIG. 6C.

Next, as shown in FIG. 6D, a metal layer 40 is formed on the glue layer30 and the semiconductor light-emitting elements 20. The metal layer 40can be formed by plating, evaporation, or sputtering, and can be thematerial with conductivity and high reflectivity, such as copper (Cu),aluminum (Al), gold (Au), silver (Ag) or other alloys. Since theformation of the metal layer 40 follows the topography of the belowstructure, the metal layer 40 contacting with the glue layer 30 forms acorresponding surface 401 along the surface 301 of the glue layer 30,and contacts with the first connection point 201 and the secondconnection point 202 of the semiconductor light-emitting element 20,wherein the corresponding surface 401 can be a curved surface, a beveledsurface, or the combination of a partial curved surface and a partialbeveled surface.

Then, as shown in FIG. 6E, the metal layer 40 can be patterned to form aplurality of grooves 402 by photolithography and etching, wherein thegrooves 402 on the semiconductor light-emitting element 20 can dividethe metal layer 40 on the semiconductor light-emitting elements 20 intothe first electrodes 400 a and the second electrodes 400 b. The firstelectrode 400 a is electrically connected to the first connection point201, and the second electrode 400 b is electrically connected to thesecond connection point 202. The groove 402 upon the gap 204 canelectrically isolate the two adjacent semiconductor light-emittingelements 20.

In another embodiment, after the polishing process as shown in FIG. 6C,the first electrode 400 a and the second electrode 400 b can also beformed by the process of forming a patterned photoresist to cover thegap 204 and the second surface 203 between the first connection point201 and the second connection point 202, and then electroplating metalmaterial on the surface 301, the first connection point 201 and thesecond connection point 202, and then removing the patternedphotoresist.

Then, as shown in FIG. 6F, the channel portions 104 of the carrier 10can be removed by etching or polishing process. Finally, the glue layer30 is removed as shown in FIG. 6G to exposes the corresponding surfaces401 of the first electrode 400 a and the second electrode 400 b. Aplurality of light-emitting structures 50 is formed accordingly. Itshould be noted that since the first electrode 400 a and the secondelectrode 400 b of the light-emitting structure 50 are conductive, theexternal current is injected into the semiconductor light-emittingelement 20 through the first connection point 201 and the secondconnection point 202 to generate light. Therefore, there is no need toconnect wires to the first connection point 201 and the secondconnection point 202 of the semiconductor light-emitting element 20 byphotolithography for connector or wire bonding. Since the correspondingsurface 401 of the first electrode 400 a and the second electrode 400 bforms a concave 405, which is a metal surface for reflection, as thesemiconductor light-emitting element 20 located on the concave 405 emitsa light 15 (the dashed line) from a light-emitting side 206 of thesemiconductor light-emitting element 20, the corresponding surface 401can reflect the light 15 to improve overall light extraction efficiency.And, as shown in FIG. 6H, the groove 402 among the semiconductorlight-emitting element 20, the first electrode 400 a, and the secondelectrode 400 b can be filled in with insulating material 32 such asepoxy to enhance the ability of the structure of semiconductorlight-emitting element 20 to resist thermal fatigue and protect thefirst connection point 201 and the second connection point 202.

Embodiment 7

Next, as shown in FIG. 7, the semiconductor light-emitting elements 20further can be connected to form a series connection. The seriesconnection is formed by connecting wires to the first connection point201 and the second connection point 202 with photolithography wirebonding or wire bonding.

By means of the detail descriptions of what is presently considered tobe the most practical and preferred embodiments of the subjectinvention, it is the expectation that the features and the gist thereofare plainly revealed. Nevertheless, these above-mentioned illustrationsare not intended to be construed in a limiting sense. Instead, it shouldbe well understood that any analogous variation and equivalentarrangement is supposed to be covered within the spirit and scope to beprotected and that the interpretation of the scope of the subjectinvention would therefore as much broadly as it could apply.

What is claimed is:
 1. A light-emitting structure, comprising: asemiconductor light-emitting element comprising a bottom surface, a topsurface opposite to the bottom surface, and a side surface arrangedbetween the bottom surface and the top surface; a first connection pointarranged on the bottom surface; and a reflective element, comprising afirst portion arranged right beneath the bottom surface, and a secondportion not overlapping the bottom surface and uplifted from a lowerelevation lower than the bottom surface to a higher elevationsubstantially equal to that of the top surface along a curved path. 2.The light-emitting structure of claim 1, wherein the first connectionpoint contacts the reflective element.
 3. The light-emitting structureof claim 1, wherein the reflective element further comprises an outersurface substantially parallel to the side surface and connected to thesecond portion.
 4. The light-emitting structure of claim 1, wherein thereflective element has a thickness which is outwardly increased along adirection normal to the side surface.
 5. The light-emitting structure ofclaim 1, further comprising a wavelength conversion layer formed on thetop surface.
 6. The light-emitting structure of claim 5, wherein thewavelength conversion layer comprises a topmost surface higher than thesecond portion.
 7. The light-emitting structure of claim 5, wherein thewavelength conversion layer directly contacts the top surface.
 8. Thelight-emitting structure of claim 5, wherein the wavelength conversionlayer is extended beyond the side surface.
 9. The light-emittingstructure of claim 1, further comprising an encapsulation layer arrangedbetween the semiconductor light-emitting element and the reflectiveelement.
 10. The light-emitting structure of claim 1, further comprisinga second connection point arranged on the bottom surface.
 11. Thelight-emitting structure of claim 10, wherein the reflective element hasa part arranged between the first connection point and the secondconnection point.
 12. A light-emitting structure, comprising: asemiconductor light-emitting element comprising a bottom surface, a topsurface opposite to the bottom surface, and a side surface arrangedbetween the bottom surface and the top surface; and a reflectiveelement, comprising a first portion arranged right beneath the bottomsurface, and a second portion not overlapping the bottom surface anduplifted from a lower elevation lower than the bottom surface to ahigher elevation substantially equal to that of the top surface; whereinthe semiconductor light-emitting element is separated from the secondportion by a distance which is gradually increased along a directionnormal to the side surface.
 13. The light-emitting structure of claim 1,wherein the second portion comprises a curved surface, a beveledsurface, or a combination thereof
 14. The light-emitting structure ofclaim 12, further comprising a second connection point arranged on thebottom surface.
 15. The light-emitting structure of claim 14, whereinthe reflective element has a part arranged between the first connectionpoint and the second connection point.
 16. The light-emitting structureof claim 12, further comprising a wavelength conversion layer formed onthe top surface.
 17. The light-emitting structure of claim 16, whereinthe wavelength conversion layer comprises a topmost surface higher thanthe second portion.
 18. The light-emitting structure of claim 16,wherein the wavelength conversion layer directly contacts the topsurface.
 19. The light-emitting structure of claim 16, wherein, thewavelength conversion layer is extended beyond the side surface.
 20. Thelight-emitting structure of claim 12, further comprising anencapsulation layer arranged between the semiconductor light-emittingelement and the reflective element.